Electronic properties of atomic layer deposited HfO2 thin films on InGaAs compared to HfO2/GaAs semiconductors

Authors

Irving K. Cashwell Jr., Northrop Grumman, Falls Church, Virginia
Donovan A. Thomas, Google, Atlanta, Georgia
Jonathan R. Skuza, Eastern Michigan University
Aswini K. Pradhan, Hampton University

Document Type

Article

Publication Date

2024

Department/School

Physics and Astronomy

Publication Title

Crystals

Abstract

This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO₂/InGaAs-based MOS capacitor, in which growth temperatures and surface treatments of the substrate are two key factors that contribute to the uniformity and composition of the HfO₂ thin films. A remarkable asymmetry observed in capacitance versus voltage measurements was linked to the interface defects and charge redistribution, as confirmed from X-ray photoelectron spectroscopy. The GaAs substrates that were etched with only NH₄OH showed a large frequency dispersion and a higher surface roughness; however, the HfO₂ thin films grown on GaAs pre-treated with both NH₄OH etching and (NH₄)₂S passivation steps produced a desirable surface and superior electronic properties.

Comments

J. R. Skuza is a faculty member in EMU's Department of Physics and Astronomy.

Link to Published Version

DOI: 10.3390/cryst14090753

Recommended Citation

Cashwell, I. K. J., Thomas, D. A., Skuza, J. R., & Pradhan, A. K. (2024). Electronic properties of atomic layer deposited HfO2 thin films on InGaAs compared to HfO2/GaAs semiconductors. Crystals, 14(9), 753. https://doi.org/10.3390/cryst14090753